Atomera Signs Joint Development Agreement with IQE for RF GaN-on-Silicon Technology

Atomera has entered into a joint development agreement with IQE to integrate its Mears Silicon Technology (MST) with IQE's GaN-on-Silicon technology. The collaboration aims to create high-performance, cost-effective RF solutions for the semiconductor market, addressing the increasing demand for enhanced power efficiency and performance in RF applications. This partnership is a strategic move to promote the commercial adoption of advanced semiconductor materials.