Atomera and IQE Enter Joint Development Agreement Utilizing Mears Silicon Technology

Atomera has entered into a Joint Development Agreement with IQE plc to develop high-performance Radio Frequency Gallium Nitride (RF GaN) products. The collaboration will leverage Atomera's Mears Silicon Technology (MST) applied to silicon substrates, alongside IQE's expertise in compound semiconductor epitaxy. This partnership aims to enhance the semiconductor industry's capabilities in RF GaN technology.